MODELLING AND IMPLEMENTATION OF SUBTHRESHOLD CURRENTS IN SCHOTTKY BARRIER CNTFETs FOR DIGITAL APPLICATIONS
نویسندگان
چکیده
The aim of this paper is to model and characterize the current voltage characteristics of Schottky Barrier (SB) Carbon NanoTube Field Effect Transistors (SB-CNTFETs) below and above threshold, in order to evaluate the noise margin and output voltage swing, whose values are necessary in the design of digital circuits.
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